![]() Quantum spin Hall state in monolayer 1T’-WTe 2. Strongly enhanced charge-density-wave order in monolayer NbSe 2. Ising pairing in superconducting NbSe 2 atomic layers. Atomically thin MoS 2: a new direct-gap semiconductor. Electron tunneling through ultrathin boron nitride crystalline barriers. Electric field effect in atomically thin carbon films. Integrating other vdW materials into these heterostructures and tuning their new degrees of freedom, such as the relative rotation between crystals and their interlayer spacing, provide a path for engineering and manipulating nearly limitless new physics and device properties. Additionally, under certain circumstances, hexagonal boron nitride can modify the optical and electronic properties of graphene in new ways, inducing the appearance of secondary Dirac points or driving new plasmonic states. Hexagonal boron nitride can act as a featureless dielectric substrate for graphene, enabling devices with ultralow disorder that allow access to the intrinsic physics of graphene, such as the integer and fractional quantum Hall effects. Hexagonal boron nitride is the second most popular vdW material after graphene, owing to the new physics and device properties of vdW heterostructures combining the two. The recent development of simple experimental techniques for combining graphene with other atomically thin vdW crystals to form heterostructures has enabled the exploration of the properties of these so-called vdW heterostructures. As the first in a large family of 2D van der Waals (vdW) materials, graphene has attracted enormous attention owing to its remarkable properties. ![]()
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |